化合物半导体 InP, GaP, GaAs.InAs 单晶成长法(VGF / VB / LEC)用高纯度B2O3
氧化二硼 (B2O3) 由高纯度硼酸生产。它用于 InP, GaAs 生产。但客户也有需求,他们使用 LEC 和/或 VGF 方法处理 GaP 和/或 InAs 晶体生长工艺。三氧化二硼 (B2O3) 由高纯度硼酸生产。它用于 GaAs 生产。但客户也有需求,他们使用 LEC 和/或 VGF 方法处理 GaP 和/或 InAs 晶体生长工艺
VGF 坩锅
VB 坩锅
LEC 坩锅
MBE 坩锅
MOCVD 绝缘板
The purity of our product was determined using GDMS and it was evaluated as 99.995 – 99.999 %.
Specification of our standard produced pellets.
Product moisture (ppm weight) |
Range of water content |
I. |
II. |
III. |
IV. |
Deviation is determined to be: +/- 10 %. |
Dimension and weight of cylinder and tapered pellets |
Diameter, mm |
50 |
83 |
100 |
138 |
Weight, g |
55 |
100 – 200 |
400 |
400 – 700 |
Deviation for diameter is determined to be: +/- 2 mm, deviation for weight is determined to be: +/- 3 %. |
The water content, shape and weight of pellets can be modified according to the customer’s requirements.
材料特性
* Ultra purity, low density
* Excellent mechanical strength
* Better thermal conductivity and thermal stability
* High dielectric strength
* None toxic, none porous
* Withstands high tempture and rapid cooling process
* Tensile strength increases with tempture
* None reactive to most compounds
* High oxidation resistance
* Low outgas