化合物半導體 InP, GaP, GaAs 單晶成長法(VGF / VB / LEC)用坩鍋 /多晶合成坩鍋 / 合成舟 (boats)
VGF 坩鍋
VB 坩鍋
LEC 坩鍋
MBE 坩鍋
MOCVD 絕緣板
PBN 材料特性
* Ultra purity, low density
* Excellent mechanical strength
* Better thermal conductivity and thermal stability
* High dielectric strength
* None toxic, none porous
* Withstands high tempture and rapid cooling process
* Tensile strength increases with tempture
* None reactive to most compounds
* High oxidation resistance
* Low outgas