化合物半導體 InP, GaP, GaAs.InAs 單晶成長法(VGF / VB / LEC)用高純度B2O3
氧化二硼 (B2O3) 由高純度硼酸生產。它用於 InP, GaAs 生產。但客戶也有需求,他們使用 LEC 和/或 VGF 方法處理 GaP 和/或 InAs 晶體生長工藝。三氧化二硼 (B2O3) 由高純度硼酸生產。它用於 GaAs 生產。但客戶也有需求,他們使用 LEC 和/或 VGF 方法處理 GaP 和/或 InAs 晶體生長工藝
VGF 坩鍋
VB 坩鍋
LEC 坩鍋
MBE 坩鍋
MOCVD 絕緣板
The purity of our product was determined using GDMS and it was evaluated as 99.995 – 99.999 %.
Specification of our standard produced pellets.
Product moisture (ppm weight) |
Range of water content |
I. |
II. |
III. |
IV. |
Deviation is determined to be: +/- 10 %. |
Dimension and weight of cylinder and tapered pellets |
Diameter, mm |
50 |
83 |
100 |
138 |
Weight, g |
55 |
100 – 200 |
400 |
400 – 700 |
Deviation for diameter is determined to be: +/- 2 mm, deviation for weight is determined to be: +/- 3 %. |
The water content, shape and weight of pellets can be modified according to the customer’s requirements.
材料特性
* Ultra purity, low density
* Excellent mechanical strength
* Better thermal conductivity and thermal stability
* High dielectric strength
* None toxic, none porous
* Withstands high tempture and rapid cooling process
* Tensile strength increases with tempture
* None reactive to most compounds
* High oxidation resistance
* Low outgas