|
Parameter |
2” S-doped InP Wafer |
2” Fe-doped InP Wafer |
|
Material |
VGF InP Single Crystal Wafer |
VGF InP Single Crystal Wafer |
|
Grade |
Epi-Ready |
Epi-Ready |
|
Dopant |
S |
Fe |
|
Conduction Type |
S-C-N |
S-I |
|
Wafer Diameter (mm) |
50.8±0.4 |
50.8±0.4 |
|
Orientation |
(100) º±0.5º |
(100)º±0.5º |
|
OF location / Length |
EJ [0-1-1] / 17±1 |
EJ [0-1-1] /17±1 |
|
IF Location / Length |
EJ [0-1 1] / 7±1 |
EJ [0-1 1] / 7±1 |
|
Carrier Conc. (cm-3) |
(1~6) E 18 |
1.0E7 - 5.0E8 |
|
Resistivity (Wcm) |
8~15 E-4 |
≥1.0E7 |
|
Mobility (cm2/Vs) |
1300 ~ 1800 |
≥2000 |
|
Average EPD (cm-2) |
≤ 500 |
≤ 3000 |
|
Thickness (µm) |
475 ± 15 |
475 ± 15 |
|
TTV/TIR (µm) |
≤15 |
≤15 |
|
Bow (µm) |
≤15 |
≤15 |
|
Wrap (µm) |
≤15 |
≤15 |
|
Particle Count |
N/A |
N/A |
|
Surface |
Front side: Polished, |
Front side: Polished, |
|
Wafer Packaging |
Wafer fastened by a spider in an individual tray and sealed with N2 in a static shielding bag. Packing done in a class 100 clean room. |
Wafer fastened by a spider in an individual tray and sealed with N2 in a static shielding bag. Packing done in a class 100 clean room |