Parameter

2” S-doped InP Wafer

2” Fe-doped InP Wafer

Material

VGF InP Single Crystal Wafer

VGF InP Single Crystal Wafer

Grade

Epi-Ready

Epi-Ready

Dopant

S

Fe

Conduction Type

S-C-N

S-I

Wafer Diameter (mm)

50.8±0.4

50.8±0.4

Orientation

(100) º±0.5º

(100)º±0.5º

OF location / Length

EJ [0-1-1] / 17±1

EJ [0-1-1]  /17±1

IF Location / Length

EJ [0-1 1] / 7±1

EJ [0-1 1] / 7±1

Carrier Conc. (cm^-3)

(1~6) E 18

1.0E7 - 5.0E8

Resistivity (Wcm)

8~15 E-4

≥1.0E7

Mobility (cm²/Vs)

1300 ~ 1800

≥2000

Average EPD (cm^-2)

≤ 500

≤ 3000

Thickness (µm)

475 ± 15

475 ± 15

TTV/TIR (µm)

≤15

≤15

Bow (µm)

≤15

≤15

Wrap (µm)

≤15

≤15

Particle Count

N/A

N/A

Surface

    Front side: Polished, 
Black side: Etched

    Front side: Polished, 
Black side: Etched

Wafer Packaging

Wafer fastened by a spider in an individual tray and sealed with N2 in a static shielding bag. Packing done in a class 100 clean room.

Wafer fastened by a spider in an individual tray and sealed with N2 in a static shielding bag. Packing done in a class 100 clean room